SiC Schottky Diodes>
Type
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I(AV)

VRRM


(I=IRM)

IFSM
VFM
IRM
Trr
Case Style
VFM
I(AV)
TA=25℃
A
V
A
V
A
μA
ns
SCS210AGHR-E
78
10
650
1.55
10
200
600
TO-220
SCS210AG
78^6
10
650
1.55
10
200
600
TO-220
SCS210AJ
78^2
10
650
1.50
10
50
650
TO-220
SCS210AM
34^6
10
650
1.55
10
200
600
TO-220
SCS210KE-2-E
80/170^6
5/10
1200
1.60
5
100
1200
TO-247
SCS210KE2HR-E
80/170^6
5/10
1200
1.60
5
100
1200
TO-247
SCS210KG
150^6
10
1200
1.60
10
200
1200
TO-220
SCS306AHG
46^2
6
650
1.5
6
30
650
TO-220
SCS306AM
30^2
6
650
1.5
6
30
650
TO-220

SiC Schottky Diodes

  • SCS210AGHR-E
  • SCS210AG
  • SCS210AJ
  • SCS210AM
  • SCS210KE-2-E
  • SCS210KE2HR-E
  • SCS210KG
  • SCS306AHG
  • SCS306AM
  • SiC Field Effect Transistor

  • SCT3022KL